The V-I characteristics of schottky diode is shown in the figure. V-I characteristics of schottky diode is almost similar to the P-N junction.
- In schottky diode the forward voltage drop is very low compare to the similar to P-N junction diode.
- The forward voltage drop of shottky diode is 0.2 to 0.3 volts, It generally made up of silicon.
- V-I characteristics of schottky diode are very steeper compare to the V-I characteristics of P-N junction diode.
- As compare to silicon diode the reverse saturation current occurs at a very low voltage.
