V-I characteristics of schottky diode

The V-I characteristics of schottky diode is shown in the figure. V-I characteristics of schottky diode is almost similar to the P-N junction.

  • In schottky diode the forward voltage drop is very low compare to the similar to P-N junction diode.
  • The forward voltage drop of shottky diode is 0.2 to 0.3 volts, It generally made up of silicon.
  • V-I characteristics of schottky diode are very steeper compare to the V-I characteristics of  P-N junction diode.
  • As compare to silicon diode the reverse saturation current occurs at a very low voltage.

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