An IGBT is essentially a MOSFET controlling
a bipolar junction power transistor with both transistors are integrated
on a single piece of silicon.
MOSFET find a most important application in high
frequency switching application, varying from few watts to few kWs, While IGBT
possesses high input impedance like a MOSFET and has low on-state power loss as
in a BJT.
With the rise in temperature, the increase in
on-state resistance in MOSFET is much pronounced than it is in IGBT devices. So,
on-state voltage drop and losses rise rapidly in MOSFET compare to IGBT, with
rising in temperature.
So here this article gives information about the
difference between IGBT and MOSFET to know more details about it.
Difference between IGBT and MOSFET
- IGBT modules are their higher
voltage and current handling capability as compared to a comparable
price of MOSFET.
- Both IGBT and MOSFET are
voltage control devices and IGBT has a BJT like conduction
characteristics.
- Terminals of IGBT are known as
an emitter, collector, and gate, whereas MOSFET terminals are gate, source
and drain.
- IGBT has a better power handling
than MOSFET.
- IGBT has a lower forward
voltage drop as compared to MOSFET.
- MOSFET has a long history than
IGBT.
- MOSFET used in a condition of
high light-load efficiency, dv/dt on the diode is a limited and wide line
and load conditions where IGBT used in full load efficiency, high
dv/dt handled by a diode and high power levels around 3 kW.
- IGBT is extremely tolerant to
electrostatic discharge and overloads whereas MOSFET are vulnerable to ESD
as the high impedance technology won't allow for voltage
dissipation.
- MOSFET used in medium to
ultra-high-power applications such as SMPS and VFDs and IGBT used in
switching and amplifying weak electronic signals in electronic
devices.
- IGBT has PN junction whereas
MOSFET doesn't have that.
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