Difference between IGBT and MOSFET

An IGBT is essentially a MOSFET controlling a bipolar junction power transistor with both transistors are integrated on a single piece of silicon. 

MOSFET find a most important application in high frequency switching application, varying from few watts to few kWs, While IGBT possesses high input impedance like a MOSFET and has low on state power loss as in a BJT.
With the rise in temperature, the increase in on-state resistance in MOSFET is much pronounced than it is in IGBT device. So, on-state voltage drop and losses rise rapidly in MOSFET compare to IGBT, with rising in temperature.
So here this article gives information about the difference between IGBT and MOSFET to know more details about it.

Difference : 

  • IGBT modules are their higher voltage and current handling capability as compared to a comparable price of MOSFET. 
  • Both IGBT and MOSFET are voltage control devices and IGBT has a BJT like conduction characteristics. 
  • Terminals of IGBT are known as an emitter, collector, and gate, whereas MOSFET terminals are gate, source and drain. 
  • IGBT has better power handling than MOSFET. 
  • IGBT has a lower forward voltage drop as compared to MOSFET.  
  • MOSFET has a long history than IGBT.
  • MOSFET used in a condition of high light load efficiency, dv/dt on the diode is a limited and wide line and load conditions where IGBT used in full load efficiency, high dv/dt handled by a diode and high power levels around 3 kW.
  • IGBT is extremely tolerant to electrostatic discharge and overloads whereas MOSFET are vulnerable to ESD as the high impedance technology won't allow for voltage dissipation. 
  • MOSFET used in medium to ultra-high-power applications such as SMPS and VFDs and IGBT used in switching and amplifying weak electronic signals in electronic devices. 
  • IGBT has PN junction whereas MOSFET doesn't have that. 
This article also gives one more difference to better understanding this topic :
check it out a difference between IGBT and Thyristor