MOSFETs are classified into two types called NMOS and PMS. The basic difference between NMOS and PMOS is that the source and drain terminal in NMOS is made of n-type semiconductors, while the source-drain terminal in PMOS is made of p-type semiconductors. This article on NMOS Vs PMOS MOSFET describes the basic difference between NMOS and PMOS types of MOSFET.
What is NMOS?
An NMOS is a kind of MOSFET. An NMOS transistor is made up of an n-type source and drains as well as a p-type of subtracting. When a voltage is applied to the gate, it causes holes in the body to move away from the gate. This allows an n-type channel to form between the source and the drain, and electrons are conducted from the source to the drain via an induced n-type channel.
What is PMOS?
A PMOS is a kind of MOSFET. The source and drain in PMOS devices are made of p-type material, while the bulk is made of n-type semiconductors. Electrons are repelled when a negative voltage is applied to the gate, allowing holes to form a channel and travel between the source and the drain. The majority of carriers in PMOS are holes because holes move much slower than electrons, it is much easier to control the current.
NMOS Vs PMOS | Difference between NMOS and PMOS:
Fabrication:
NMOS consists of an n-type source and drain and a p-type substrate, whereas PMOS is constructed with a p-source and drain and n-type substrate.
Majority Carriers:
In NMOS, the majority of carriers are electrons, in PMOS, the majority of carriers are holes.
Impedance:
NMOS integrated circuits would be small than PMOS ICs. An NMOS can deliver half the impedance of PMOS. PMOS is a p-type MOS transistor, NMOS is an n-type MOS transistor
Susceptibility:
Unlike NMOS devices, PMOS devices are less susceptible to interference.
Size:
NMOS devices are smaller in size than PMOS devices with complementary conducting properties.
Operating Speed:
When compared to PMOS devices, NMOS devices can be switched faster.
Complexity:
N channel MOSFET is smaller for the same complexity compared to P channel MOSFET.
Drain Resistance:
The drain resistance of a P-channel MOSFET is three times that of an identical N-channel MOSFET.
Summary:
As we learn above that, we have to conclude that PMOS and NMOS are simple enhancement or depletion devices. The PMOS and NMOS transistors have single characteristics. However, the CMOS transistor has dual characteristics that both the NMOS and PMOS transistors share.
Why do we use CMOS rather than PMOS and NMOS?
The low resistance of the PMOS pull-up transistor in CMOS logic, as opposed to the load resistors in NMOS logic, allow for fast low-high and high-low output transitions. The output signal oscillates the full voltage range between the low and high rails. COMOS transistors have more function, low noise, and faster speed than NMOS and PMOS transistors.
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