Difference between PN junction diode and schottky diode

As compared to the P-N junction diode, a Schottky diode has :
  • Low cut in voltage.
  • High reverse leakage current.
  • Reverse breakdown voltage is very low as compared to the P-N junction diode.
Some more comparison between Schottky diode and P-N junction diode given below

Schottky diode :
  • A Schottky diode is a unipolar device whereas is a bipolar device.
  • A Schottky diode is high switching speed while  P-N junction diode switching speed is limited.
  • The Schottky diode has turned on voltage around 0.2 V while  P-N junction diode has turned on voltage around 0.7 V.
  • Schottky diode depletion region is absent while the P-N junction diode depletion region is present.
  • The Schottky diode has high operating frequency while P-N junction diode low operating frequency.
  • Schottky diode electron is majority carriers in both metal and semiconductor while P-N junction diode electrons are the majority carrier in n-region and holes are majority carrier in p region.
  • In Schottky diode, the turn-on voltage is very low while the P-N junction diode turns on voltage high compared to Schottky diode.
  • Schottky diode forward current due to  the mionic emission (majority carrier transport) while P-N junction diode  forward current due to diffusion current 
  • Schottky diode No recombination on depletion layer while P-N junction diode recombination on depletion layer.