As compared to the P-N junction diode, a Schottky diode has :
- Low cut in voltage.
- High reverse leakage current.
- The reverse breakdown voltage is very low compared to the P-N junction diode.
Some more comparisons between the Schottky diode and the P-N junction diode are given below
Schottky diode :
- A Schottky diode is a unipolar device whereas is a bipolar device.
- A Schottky diode is a high switching speed while a P-N junction diode's switching speed is limited.
- The Schottky diode has turned on a voltage of around 0.2 V while the P-N junction diode has turned on a voltage of around 0.7 V.
- Schottky diode depletion region is absent while the P-N junction diode depletion region is present.
- The Schottky diode has a high operating frequency while the P-N junction diode low operating frequency.
- Schottky diode electron is the majority carriers in both metal and semiconductor while P-N junction diode electrons are the majority carrier in the n-region and holes are the majority carrier in the p region.
- In the Schottky diode, the turn-on voltage is very low while the P-N junction diode turns on voltage is high compared to the Schottky diode.
- Schottky diode forward current due to the ionic emission (majority carrier transport) while P-N junction diode forward current due to diffusion current
- Schottky diode No recombination on the depletion layer while P-N junction diode recombination on the depletion layer.
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- Difference between cell splitting and cell sectoring
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- Difference between LED and Laser diode
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- Difference Between Schottky and Frenkel Defect
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As compared to the P-N junction diode, a Schottky diode has :
- Low cut in voltage.
- High reverse leakage current.
- The reverse breakdown voltage is very low compared to the P-N junction diode.
Some more comparisons between the Schottky diode and the P-N junction diode are given below
Schottky diode :
- A Schottky diode is a unipolar device whereas is a bipolar device.
- A Schottky diode is a high switching speed while a P-N junction diode's switching speed is limited.
- The Schottky diode has turned on a voltage of around 0.2 V while the P-N junction diode has turned on a voltage of around 0.7 V.
- Schottky diode depletion region is absent while the P-N junction diode depletion region is present.
- The Schottky diode has a high operating frequency while the P-N junction diode low operating frequency.
- Schottky diode electron is the majority carriers in both metal and semiconductor while P-N junction diode electrons are the majority carrier in the n-region and holes are the majority carrier in the p region.
- In the Schottky diode, the turn-on voltage is very low while the P-N junction diode turns on voltage is high compared to the Schottky diode.
- Schottky diode forward current due to the ionic emission (majority carrier transport) while P-N junction diode forward current due to diffusion current
- Schottky diode No recombination on the depletion layer while P-N junction diode recombination on the depletion layer.
Explore more information:
- difference between PIN photodiode and Avalanche photodiode
- Difference between co-channel interference and adjacent channel interference
- Difference between cell splitting and cell sectoring
- Difference between photodiode and phototransistor
- Difference between photodiode and LED
- Difference between LED and Laser diode
- Diode vs zener diode
- Difference Between Schottky and Frenkel Defect
- Difference Between Zener and Avalanche Breakdown
- Difference between LCD and LED