Difference between PN junction diode and schottky diode

As compared to the P-N junction diode, a Schottky diode has :
  • Low cut in voltage.
  • High reverse leakage current.
  • The reverse breakdown voltage is very low compared to the P-N junction diode.
Some more comparisons between the Schottky diode and the P-N junction diode are given below

Schottky diode :
  • A Schottky diode is a unipolar device whereas is a bipolar device.
  • A Schottky diode is a high switching speed while a P-N junction diode's switching speed is limited.
  • The Schottky diode has turned on a voltage of around 0.2 V while the P-N junction diode has turned on a voltage of around 0.7 V.
  • Schottky diode depletion region is absent while the P-N junction diode depletion region is present.
  • The Schottky diode has a high operating frequency while the P-N junction diode low operating frequency.
  • Schottky diode electron is the majority carriers in both metal and semiconductor while P-N junction diode electrons are the majority carrier in the n-region and holes are the majority carrier in the p region.
  • In the Schottky diode, the turn-on voltage is very low while the P-N junction diode turns on voltage is high compared to the Schottky diode.
  • Schottky diode forward current due to  the ionic emission (majority carrier transport) while P-N junction diode  forward current due to diffusion current 
  • Schottky diode No recombination on the depletion layer while P-N junction diode recombination on the depletion layer.
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As compared to the P-N junction diode, a Schottky diode has :
  • Low cut in voltage.
  • High reverse leakage current.
  • The reverse breakdown voltage is very low compared to the P-N junction diode.
Some more comparisons between the Schottky diode and the P-N junction diode are given below

Schottky diode :
  • A Schottky diode is a unipolar device whereas is a bipolar device.
  • A Schottky diode is a high switching speed while a P-N junction diode's switching speed is limited.
  • The Schottky diode has turned on a voltage of around 0.2 V while the P-N junction diode has turned on a voltage of around 0.7 V.
  • Schottky diode depletion region is absent while the P-N junction diode depletion region is present.
  • The Schottky diode has a high operating frequency while the P-N junction diode low operating frequency.
  • Schottky diode electron is the majority carriers in both metal and semiconductor while P-N junction diode electrons are the majority carrier in the n-region and holes are the majority carrier in the p region.
  • In the Schottky diode, the turn-on voltage is very low while the P-N junction diode turns on voltage is high compared to the Schottky diode.
  • Schottky diode forward current due to  the ionic emission (majority carrier transport) while P-N junction diode  forward current due to diffusion current 
  • Schottky diode No recombination on the depletion layer while P-N junction diode recombination on the depletion layer.
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