As compared to the P-N junction diode, a Schottky diode has :
- Low cut in voltage.
- High reverse leakage current.
- Reverse breakdown voltage is very low as compared to the P-N junction diode.
Some more comparison between Schottky diode and P-N junction diode given below
Schottky diode :
- A Schottky diode is a unipolar device whereas is a bipolar device.
- A Schottky diode is high switching speed while P-N junction diode switching speed is limited.
- The Schottky diode has turned on voltage around 0.2 V while P-N junction diode has turned on voltage around 0.7 V.
- Schottky diode depletion region is absent while the P-N junction diode depletion region is present.
- The Schottky diode has high operating frequency while P-N junction diode low operating frequency.
- Schottky diode electron is majority carriers in both metal and semiconductor while P-N junction diode electrons are the majority carrier in n-region and holes are majority carrier in p region.
- In Schottky diode, the turn-on voltage is very low while the P-N junction diode turns on voltage high compared to Schottky diode.
- Schottky diode forward current due to the mionic emission (majority carrier transport) while P-N junction diode forward current due to diffusion current
- Schottky diode No recombination on depletion layer while P-N junction diode recombination on depletion layer.